t m february 2010 FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet ?2010 fairchild semiconductor corporation FDY102PZ rev.b2 www.fairchildsemi.com 1 FDY102PZ single p-channel ( ? 1.5 v) specified powertrench ? mosfet ?20 v, ?0.83 a, 0.5 features max r ds(on) = 0.5 at v gs = ?4.5 v, i d = ?0.83 a max r ds(on) = 0.7 at v gs = ?2.5 v, i d = ?0.70 a max r ds(on) = 1.2 at v gs = ?1.8 v, i d = ?0.43 a max r ds(on) = 1.8 at v gs = ?1.5 v, i d = ?0.36 a hbm esd protection level = 1400 v (note 3) rohs compliant general description this single p-channel mosfet has been designed using fairchild semiconductor?s advanced power trench process to optimize the r ds(on) @v gs = ?1.5 v. application li-ion battery pack s g g d s d 1 3 2 sc89-3 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage ?20 v v gs gate to source voltage 8 v i d drain current -continuous (note 1a) ?0.83 a -pulsed ?1.0 p d power dissipation (note 1a) 0.625 w power dissipation (note 1b) 0.446 t j , t stg operating and storage junction temperature range ?55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 200 c/w r ja thermal resistance, junction to ambient (note 1b) 280 device marking device package reel size tape width quantity e FDY102PZ sc89-3 7 ? 8 mm 3000 units
FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics (note 2) dynamic characteristics switching characteristics (note 2) drain-source diode characteristics and maximum rating symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = ?250 a, v gs = 0 v ?20 v bv dss t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c -11 mv / c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 a ?0.4 ?0.7 ?1.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 3 mv/c r ds(on) static drain to source on-resistance v gs = ?4.5 v, i d = ?0.83 a 0.28 0.5 v gs = ?2.5 v, i d = ?0.70 a 0.36 0.7 v gs = ?1.8 v, i d = ?0.43 a 0.47 1.2 v gs = ?1.5 v, i d = ?0.36 a 0.62 1.8 v gs = ?4.5 v, i d = ?0.83 a, t j =125 c 0.39 0.85 g fs forward transconductance v dd = ?5 v, i d = ?0.83 a 2 s c iss input capacitance v ds = ?10 v, v gs = 0 v, f = 1 mhz 100 135 pf c oss output capacitance 23 35 pf c rss reverse transfer capacitance 18 30 pf t d(on) turn-on delay time v dd = ?10 v, i d = ?0.83 a v gs = ?4.5 v, r gen = 6 3.5 10 ns t r rise time 2.9 10 ns t d(off) turn-off delay time 23 37 ns t f fall time 13 23 ns q g total gate charge v dd = ?10 v, i d = ?0.83 a v gs = ?4.5 v 2.2 3.1 nc q gs gate to source charge 0.3 nc q gd gate to drain ?miller? charge 0.6 nc i s maximum continuous drain-source diode forward current ?0.52 a v sd source to drain diode forward voltage v gs = 0 v, i s = ?0.52 a (note 2) ?1.0 ?1.2 v t rr reverse recovery time i f = ?0.83 a, di f /dt = 100 a/ s 18 31 ns q rr reverse recovery charge 3.8 10 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. 2. pulse test : pulse width < 300 us, duty cycle < 2.0% 3: the diode connected between the gate and source serves only as pr otection against esd. no gate overvoltage rating is implied . a) 200 o c/w when mounted on a 1 in 2 pad of 2 oz copper. b) 280 o c/w when mounted on a minimum pad of 2 oz copper. ?2010 fairchild semiconductor corporation FDY102PZ rev.b2
FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.00.51.01.52.0 0.0 0.2 0.4 0.6 0.8 1.0 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -1.8 v v gs = -2.5 v pulse duration = 80 s duty cycle = 0.5% max v gs = -2.0 v v gs = -1.5 v v gs = -4.5 v on region characteristics figure 2. 0.00.51.01.52.02.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs = -1.8 v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current (a) v gs = -2.0v v gs = -2.5 v v gs = -1.5 v v gs =-4.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -0.83 a v gs = -4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.4 0.8 1.2 1.6 2.0 t j = 125 o c i d = -0.415 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.51.01.52.0 0.0 0.2 0.4 0.6 0.8 1.0 -v gs , gate to source voltage (v) -i d , drain current (a) t j = 125 o c v ds = -5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current ?2010 fairchild semiconductor corporation FDY102PZ rev.b2
FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet www.fairchildsemi.com 4 figure 7. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 q g , gate charge (nc) -v gs , gate to source voltage (v) i d = -0.83 a v dd = -12 v v dd = -10 v v dd = -8 v gate charge characteristics figure 8. 0.1 1 10 1 10 100 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 20 500 c a p a c i t a n c e v s d r a i n to source voltage f i g u r e 9 . g a t e l e a k a g e c u r r e n t vs gate to 03691215 10 -3 10 -1 10 1 10 3 10 5 v gs = 0 v t j = 25 o c t j = 125 o c -v gs , gate to source voltage (v) -i g , gate leakage current (ua) source voltage figure 10. 0.1 1 10 0.01 0.1 1 10 ms 1 s dc 100 ms 10 ms 1 ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r ja = 280 o c/w t a = 25 o c 60 2 f o r w a r d b i a s s a f e operating area figure 11. single pu lse maximum power dissipation 10 -3 10 -2 10 -1 10 0 10 1 100 1000 1 10 p (pk) , peak transient power (w) v gs = -4.5 v single pulse r ja = 280 o c/w t a = 25 o c t, pulse width (sec) 30 0.2 typical characteristics t j = 25 c unless otherwise noted ?2010 fairchild semiconductor corporation FDY102PZ rev.b2
FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet www.fairchildsemi.com 5 figure 12. 10 -3 10 -2 10 -1 10 0 10 1 100 1000 0.1 1 0.02 single pulse r ja = 280 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a junction-to-ambient transien t thermal response curve typical characteristics t j = 25 c unless otherwise noted ?2010 fairchild semiconductor corporation FDY102PZ rev.b2
FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet www.fairchildsemi.com 6 dimensional outline and pad layout notes: unless otherwise specified a) this package conforms to eiaj sc89 packaging standard. b) all dimensions are in millimeters. c) dimensions are exclusive of burrs, mold flash, and tie bar extrusions. 1.70 1.50 0.98 0.78 1.70 1.50 0.50 1.00 0.35 0.25 0.54 0.34 0.43 0.28 0.78 0.58 (0.15) 12 3 land pattern recommendation 1.80 0.50 1.14 0.50 0.50 0.66 see detail a 0.20 0.04 detail a scale 2 : 1 0.10 0.00 ?2010 fairchild semiconductor corporation FDY102PZ rev.b2
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FDY102PZ single p-channel (?1.5 v) specified powertrench ? mosfet www.fairchildsemi.com 7 ?2010 fairchild semiconductor corporation FDY102PZ rev.b2
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